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DTSTART:20170326T030000
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DTSTAMP:20260428T122511Z
UID:5901a40c2a7fb781903566@ist.ac.at
DTSTART:20170503T113000
DTEND:20170503T123000
DESCRIPTION:Speaker: Romain Maurand\nAbstract: Hole spins in silicon repres
 ent a promising direction for solid-state quantum computation\, possibly c
 ombining fast qubits with limited hyperfine interaction. We report on a qu
 bit device implemented on a foundry-compatible Si CMOS platform. The devic
 e\, fabricated using silicon-on-insulator NanoWire MOSFET technology\, is 
 in essence a two-gate pFET. The qubit is encoded in the spin degree of fre
 edom of a hole quantum dot defined by one of the gates\, while the second 
 gate defines another quantum dot used for the qubit initialization and rea
 dout. All electrical\, two-axis control of the spin qubit is achieved by a
 pplying a phase-tunable microwave modulation to one of the gate. We demons
 trate fast coherent oscillations with Rabi frequencies as high as 80MHz [2
 ] with an inhomogeneous dephasing time of T2* ~ 300ns. Eventually focusing
  on the magnetic anisotropy of the qubit response we manage to get some in
 sights on the mechanisms driving the hole spin resonance. By demonstrating
  a hole spin qubit functionality in a conventional transistor-like layout 
 and process flow\, this result bears relevance for the future up-scaling o
 f spin qubit architectures.\n\n[1]- Hutin\, L. et al. IEEE Symp. VLSI Tech
 nol. 1–2 (2016).\n[2]- Maurand\, R. et al. A CMOS silicon spin qubit. Nat
 . Commun. 7\, 13575 (2016).
LOCATION:Seminar room Big Ground floor / Office Bldg West (I21.EG.101)\, IS
 TA
ORGANIZER:sdanzing@ist.ac.at
SUMMARY:Romain Maurand: A CMOS silicon hole spin qubit
URL:https://talks-calendar.ista.ac.at/events/598
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