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DTSTAMP:20260424T112025Z
UID:671fb2a2e558a802221392@ist.ac.at
DTSTART:20241108T110000
DTEND:20241108T120000
DESCRIPTION:Speaker: Aleksandar Matkovic\nhosted by Hryhoriy Polshyn\nAbstr
 act: As the 2D materials based electronics develop towards very large-scal
 e integrated circuits\, one of the major challenges is to obtain high qual
 ity contact to 2D semiconductors. Carrier injection barriers\, metal induc
 ed gap states\, and consequently Fermi level pinning at the electrode inte
 rfaces hinder the integration of 2D semiconductors. Intrinsic properties o
 f the channel 2D material are rarely accessible as usually majority of the
  bias intended for the carrier transport is used to overcome the contact r
 elated junctions. Further\, in the case of polycrystalline films and assem
 bled nanosheet networks also junctions between adjacent domains and nanosh
 eets govern the macroscopic response of the devices.This talk will focus o
 n single crystalline MoS2\, WSe2\, PtSe2\, and on liquid phase-exfoliated 
 and liquid-liquid interface assembled MoS2 nanosheet networks. We will rev
 iew several possible electrode choices\, from organic self-assembled monol
 ayers functionalized conventional metals\, to van der Waals semi-metallic 
 contacts. The focus will be on ways to evaluate contact related losses con
 sidering macroscopic electrical measurements\, device modelling\, and loca
 l probing of the electrostatic potential by in operando Kelvin Probe Force
  Microscopy. We will see how contact engineering can enhance the propertie
 s of 2D semiconductor devices\, and also tailor carrier injection into 2D 
 channels.[1]   Matkovi\, A.\, et.al.\, Interfacial band engineering of MoS
 2/gold interfaces using pyrimidinecontaining selfassembled monolayers: tow
 ard contactresistancefree bottomcontacts. Advanced Electronic Materials 6\
 , 2000110\, 2020.[2]  Murastov\, G.\, et.al.\,  Multi-Layer Palladium Dise
 lenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field
 -Effect Transistors. Nanomaterials 14\, 481\, 2024.[3] Gabbett\, C.\, et.a
 l.\, Understanding how junction resistances impact the conduction mechanis
 m in nano-networks. Nature Communications 15\, 4517\, 2024.[4] Aslam\, M.A
 .\, et.al.\, All van der Waals Semiconducting PtSe2 Field Effect Transisto
 rs with Low Contact Resistance Graphite Electrodes. Nano Letters 24\, 6529
 \, 2024.
LOCATION:Office Bldg West / Ground floor / Heinzel Seminar Room (I21.EG.101
 )\, ISTA
ORGANIZER:swiddman@ist.ac.at
SUMMARY:Aleksandar Matkovic: Contact and junction resistances in 2D semicon
 ductors
URL:https://talks-calendar.ista.ac.at/events/5366
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