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DTSTART:20250330T030000
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DTSTAMP:20260312T164043Z
UID:65b10888894e6102074887@ist.ac.at
DTSTART:20241112T110000
DTEND:20241112T120000
DESCRIPTION:Speaker: Jaroslav Fabian\nhosted by Hryhoriy Polshyn\nAbstract:
  The advent of 2D materials has revolutionized solid-state physics and sol
 id-state-based technologies. The principal driving force for the expanding
  exploration of the 2D realm is the highly efficient control of the physic
 al---mechanical\, electrical\, optical\, magnetic\, and spin---properties 
 of atom-thick monolayers and their heterostructures exhibiting relatively 
 weak but impactful van der Waals interactions. Spintronics\, which aims at
  actively exploiting the spin of conduction electrons to introduce novel d
 evice concepts such as field-effect spin transistors\, tunneling junctions
  based on magnetoresistance\, spin-charge conversion\, or spin torques\, h
 as made significant strides since the first spin injection experiments in 
 graphene. Indeed\, the fundamental aspects of spin physics in monolayers a
 re rather firmly established. The next generation of 2D spintronics\, what
  is the current focus of world-wide research\, is based on van der Waals h
 eterostructures\, which offer tailor-made design platforms for designing n
 ovel spintronics phenomena. The main mechanism by which the electron spin 
 properties are tuned in heterostructures is the proximity effect. For exam
 ple\, we can design a synthetic magnetic graphene by stacking it with a 2D
  ferromagnetic semiconductor. More than that\, the effective magnetic prop
 erties of the itinerant electrons in graphene can be tuned by gating\, str
 aining\, stacking\, and twisting such a heterostructure. Similar tailor-ma
 de properties are exhibited by graphene stacked with 2D transitional-metal
  dichalcogenides\, in which case graphene electrons acquire strong spin-or
 bit coupling. Combining ferromagnets and strong spin-orbit materials resul
 ts in so exsotronic structures\, with on-demand swappable spin interaction
 s provided by gating or doping.      In this talk\, I will review the curr
 ent stage of 2D spintronics and the directions in which the research in th
 is field is moving\, from fundamentals of proximity phenomena to potential
  applications involving spin-charge conversion and spin-orbit torques.
LOCATION:Office Bldg West / Ground floor / Heinzel Seminar Room (I21.EG.101
 )\, ISTA
ORGANIZER:swiddman@ist.ac.at
SUMMARY:Jaroslav Fabian: SPINTRONICS WITH 2D Materials
URL:https://talks-calendar.ista.ac.at/events/5232
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