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DTSTAMP:20260405T133059Z
UID:1719226800@ist.ac.at
DTSTART:20240624T130000
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DESCRIPTION:Speaker: Dr. Shreyasi Das\nhosted by Hryhoriy Polshyn\nAbstract
 : Two-dimensional (2D) transition metal dichalcogenides (TMDs)\, with thei
 r unique properties\, have drawn remarkable attention for fundamental rese
 arch as well as for investigation on technological breakthroughs in variou
 s applications\, viz. photonics and optoelectronics\, neuromorphic computi
 ng\, spintronics\, quantum computing\, quantum emitters\, and detectors\, 
 etc. In this talk\, I will discuss different pathways to realize 2D TMD-ba
 sed hybrid transistors with superior performance for photodetection and sy
 naptic applications. Fabrication of high-performance phototransistors dema
 nds superior channel material\, which should be of high carrier mobility f
 or high gain bandwidth product\, a direct bandgap for efficient optical ab
 sorption\, a thinner layer for full depletion leading to ultralow dark cur
 rent\, and very low trap state density for low subthreshold swings. Layere
 d semiconducting 2D TMDs fulfill most of these requirements\; however\, th
 ey suffer from a trade-off in device performance due to the simultaneous o
 ccurrence of both absorption and amplification processes within the single
 -semiconductor channel layer. To address this issue\, I will discuss the a
 dvantages of mixed-dimensional photo field effect transistor architecture 
 by integrating strongly light-absorbing semiconducting nanocrystals with t
 he 2D channel layer having superior charge transport properties to get hig
 h responsivity as well as broad spectral response in a photodetector. I wi
 ll also discuss the benefits of asymmetric metal contacts as source and dr
 ain electrodes for achieving very low dark current values (~ pA) without a
 pplying any gate bias\, making them promising for high-sensitive detector 
 fabrication [1]. Further\, I will discuss the opportunities of 2D material
 -based mixed-dimensional architecture to fabricate optoelectronic synaptic
  devices that can detect\, process as well as store optical signals in the
  same device\, enabling faster\, more efficient\, and highly parallel info
 rmation processing in the “big-data” era. Analogous to the biological 
 synapses\, these devices reveal short-term plasticity behavior like excita
 tory postsynaptic current and paired pulsed facilitation\, and also the re
 volution from short-term plasticity to long-term plasticity\, making them 
 an excellent prototype for artificial intelligence vision systems [2]. Re
 ferences:1. S. Das\, A. Ghorai\, S. Pal\, S. Mahato\, S. Das\, and S. K. R
 ay\, "Photosensitive Field-Effect Transistor with Enhanced Photoamplificat
 ion Mediated by Charge Transfer in a Heterostructure of α- CsPbI3 Nanocry
 stals and Two-Dimensional WS2\," Phys. Rev. Appl. 19(3)\, 034051 (2023).2.
  S. Das\, V. Pal\, S. Mukherjee\, S. Das\, C. S. Tiwary\, and S. K. Ray\, 
 "MultiWavelength Optoelectronic Synaptic Transistors Based on Transition M
 etal TellurideSulfide Heterostructures\," Adv. Opt. Mater. (2024)
LOCATION:Central Bldg / O1 / Mondi 3\, ISTA
ORGANIZER:shreyasi2u94@gmail.com
SUMMARY:Dr. Shreyasi Das: Layered Transition Metal Dichalcogenides in Cutti
 ng-Edge  Optoelectronic and Synaptic Technologies
URL:https://talks-calendar.ista.ac.at/events/5069
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