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DTSTART:20200329T030000
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DTSTART:20191027T020000
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DTSTAMP:20260404T030203Z
UID:5e3be5dbeb80a230940329@ist.ac.at
DTSTART:20200326T160000
DTEND:20200326T170000
DESCRIPTION:Speaker: Jordi Arbiol\nhosted by Maria Ibanez\nAbstract: The la
 ck of mirror symmetry in binary semiconductor compounds turns them into po
 lar materials\, where two opposite orientations of the same crystallograph
 ic direction are possible. Interestingly\, their physical properties (e.g.
 : electronic or photonic) and morphological features (e.g.: shape\, growth
  direction\, etc.) also strongly depend on the polarity. It has been obser
 ved that nanoscale materials tend to grow with a specific polarity\, which
  can eventually be reversed for very specific growth conditions. In additi
 on\, polar-directed growth affects the defect density and topology and mig
 ht induce eventually the formation of undesirable polarity inversion domai
 ns in the nanostructure\, which in turn will affect the photonic and elect
 ronic final device performance.Here\, we present a detailed study on the p
 olarity-driven growth mechanism at the nanoscale\, highlighting suitable f
 uture possibilities of polarity engineering of semiconductor nanostructure
 s from VLS vertical complex heterostructures to the newest selected area g
 rowth hybrid quantum networks. The present study has been extended over a 
 wide range of semiconductor compounds\, covering the most commonly synthes
 ized III-V (GaN\, GaP\, GaAs\, GaSb\, InN\, InP\, InAs\, InSb) and II-VI (
 ZnO\, ZnTe\, CdS\, CdSe\, CdTe) nanowires and other free-standing nanostru
 ctures (tripods\, tetrapods\, belts and membranes). This systematic study 
 allowed us to explore the parameters that may induce polarity-dependent an
 d polarity-driven growth mechanisms\, as well as the polarity related cons
 equences on the physical properties of the nanostructures. The tools used 
 to study the polar nanostructures at the atomic scale will be mainly based
  on aberration corrected scanning transmission electron microscopy and rel
 ated spectroscopies. From the structural data obtain we will create 3D ato
 mic models that will allow us to understand the growth mechanisms as well 
 as be used as input data for the further electronic/photonic properties si
 mulations.[1] M. de la Mata\, et al.\, Nano Letters\, 12\, 2579 (2012) / [
 2] M. de la Mata\, et al.\, Nano Letters\, 14\, 6614 (2014)[3] M. de la Ma
 ta\, et al.\, Nano Letters\, 16\, 825 (2016) / [4] M. de la Mata\, et al.\
 , Nano Letters\, 19\, 3396 (2019)[5] M. Heiss\, et al.\, Nature Mater.\, 1
 2\, 439 (2013) / [7] M. de la Mata\, et al.\, J. Mat. Chem. C\, 1\, 4300 (
 2013)[11] S. Vaitiek?nas\, et al.\, Physical Review Letters\, 121\, 147701
  (2018) / [12] F. Krizek\, et al.\, Physical Review Materials\, 2\, 093401
  (2018)[13] P. Aseev\, et al.\, Nano Letters\, 19\, 218 (2019). / [14] G. 
 Tutuncuoglu\, et al.\, Nanoscale\, 7\, 19453 (2015)[15] M. Friedl\, et al.
 \, Nano Letters\, 18\, 2666 (2018) / [16] P. Aseev\, et al.\, Nano Letters
 \, 19\, 9102 (2019)[17]Y. Liu\, et al.\, Nano Letters\, 20\, 456 (2020)
LOCATION:Mondi Seminar Room 2\, Central Building\, ISTA
ORGANIZER:swiddman@ist.ac.at
SUMMARY:Jordi Arbiol: Free-standing nanostructures at atomic scale: from gr
 owth mechanisms to local properties
URL:https://talks-calendar.ista.ac.at/events/2633
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