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TZID:Europe/Vienna
BEGIN:DAYLIGHT
DTSTART:20190331T030000
TZOFFSETFROM:+0100
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DTSTART:20191027T020000
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BEGIN:VEVENT
DTSTAMP:20260406T000411Z
UID:5d529b3892c89070733830@ist.ac.at
DTSTART:20190823T110000
DTEND:20190823T120000
DESCRIPTION:Speaker: Fabio Ansaloni\nhosted by Andrew Higginbotham\nAbstrac
 t: The recent demonstration of hole-based spin qubits in foundry fabricate
 d silicon-on-insulator devices [1\,2] energized the pursuit of similar str
 uctures with additional functionalities\, including larger gate count\, el
 ectron-\, hole-\, or dopant operation\, variation in geometries\, introduc
 tion of split-gate electrodes [3] for local control and top gates for glob
 al control. We study a 2x2 array of quantum dots\, induced in an undoped s
 ilicon channel by two pairs of split-gate electrodes\, and apply a combina
 tion of radio-frequency reflectometry and pulsed-gate measurements to char
 acterize the electronic properties in the fewelectron regime. Each quantum
  dot can be depleted down to the last electron\, devices can be thermally 
 cycled to millikelvin temperatures yielding stable charge stability diagra
 ms\, and the overall strength of interdot tunneling couplings can be tuned
  by a global top gate. We also explain how we utilize one gate electrode f
 or charge sensing within the 2x2 array\, and report our progress towards u
 tilizing the 2x2 dot-to-dot connectivities for manipulating single-electro
 n movements in time domain\, measurements of tunneling rates\, and single-
 shot charge readout.[1] R. Maurand et al\, Nature Comm.\, 7\, 13575 (2016)
 [2] A. Crippa et al\, Nature Comm.\, 10\, 2776 (2019)[3] S. Barraud et al\
 , Technologies\, 4\, 10 (2016)
LOCATION:Foyer seminar room Ground floor / Office Bldg West (I21.EG.128)\, 
 ISTA
ORGANIZER:swiddman@ist.ac.at
SUMMARY:Fabio Ansaloni: Split-gate-induced 2x2 array of single-electron dot
 s in silicon-oninsulator
URL:https://talks-calendar.ista.ac.at/events/2059
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