BEGIN:VCALENDAR
VERSION:2.0
PRODID:icalendar-ruby
CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VTIMEZONE
TZID:Europe/Vienna
BEGIN:DAYLIGHT
DTSTART:20190331T030000
TZOFFSETFROM:+0100
TZOFFSETTO:+0200
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3
TZNAME:CEST
END:DAYLIGHT
BEGIN:STANDARD
DTSTART:20181028T020000
TZOFFSETFROM:+0200
TZOFFSETTO:+0100
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10
TZNAME:CET
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20260406T074827Z
UID:1549015200@ist.ac.at
DTSTART:20190201T110000
DTEND:20190201T120000
DESCRIPTION:Speaker: Michelle Simmons\nhosted by Georgios Katsaros\nAbstrac
 t: Extremely long electron and nuclear spin coherence times have been demo
 nstrated in isotopically pure Si-28 [1\,2] making silicon a promising semi
 conductor material for spin-based quantum information. The two-level spin 
 state of single electrons bound to shallow phosphorus donors in silicon in
  particular provide well defined\, reproducible qubits [3]. An important c
 hallenge in these systems is the realisation of an architecture\, where we
  can position donors within a crystalline environment with approx. 20-50nm
  separation\, individually address each donor\, manipulate the electron sp
 ins using ESR techniques and read-out their spin states.We have developed 
 a unique fabrication strategy for a scalable quantum computer in silicon u
 sing scanning tunneling microscope lithography to precisely position indiv
 idual P donors in Si [4] aligned with nanoscale precision to local control
  gates [5] necessary to initialize\, manipulate\, and read-out the spin st
 ates [6-8]. We have published our approach to scale-up using 3D architectu
 res for implementation of the surface code [9].During this talk I will foc
 us on demonstrating fast\, high fidelity single-shot spin read-out [10]\, 
 ESR control of precisely-positioned P donors in Si [11] and our results to
  demonstrating a two-qubit gate in donor qubits in silicon [12\,13]. With 
 important advances in control at the atomic-scale\, I will attempt to high
 light the benefits of single atom qubits in silicon.References[1] K. Saeed
 i et al.\, Science 342\, 130 (2013).[2] J. T. Muhonen et al.\, Nature Nano
 technology 9\, 986 (2014).[3] B.E. Kane\, Nature 393\, 133 (1998).[4] M. F
 uechsle et al.\, Nature Nanotechnology 7\, 242 (2012).[5] B. Weber et al.\
 , Science 335\, 6064 (2012).[6] H. Buch et al.\, Nature Communications 4\,
  2017 (2013).[7] B. Weber et al.\, Nature Nanotechnology 9\, 430 (2014).[8
 ] T. F. Watson et al.\, Science Advances 3\, e1602811 (2017).[9] C. Hill e
 t al.\, Science Advances 1\, e1500707 (2015).[10] D. Keith et al.\, paper 
 submitted (2018)[11] S. Hile et al.\, Science Advances 4\, eaaq1459 (2018)
 .[12] M.A. Broome et al.\, Nature Communications 9\, 980 (2018).[13] S. Go
 rman\, Y. He et al.\, paper in preparation (2018).
LOCATION:Raiffeisen Lecture Hall\, ISTA
ORGANIZER:arinya.eller@ist.ac.at
SUMMARY:Michelle Simmons: Atomic qubits in silicon
URL:https://talks-calendar.ista.ac.at/events/1670
END:VEVENT
END:VCALENDAR