Multiple stacking sequences between atomic layers provide a unique knob for tuning electronic properties of two-dimensional materials. In this talk, I will take graphene as an example and show our experimental results of graphene multilayers in special stackings. Experimental advances allow us to fabricate high-quality special stacked multilayer graphene devices encapsulated by hBN. By electrical transport measurement, we study two different stacking sequences, rhombohedral stacking and mixed-stacking. In rhombohedral multilayer graphene, we observe a series of correlated and topological electronic states with spontaneous broken-symmetries in the crystalline and moir flat band. For the mixed stacking, we find a non-centrosymmetric multilayer graphene, and observe transport signatures of intrinsic layer polarization and multi-flat bands.
References: 1.Kai Liu et al, Nature Nanotechnology, 19, 188-195 (2024) 2.Yating Sha et al, Science,384, 141-149 (2024) 3.Jian Zheng et al, arXiv:2412.09985 4.Kai Liu et al, arXiv:2505.12478